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Step structure of vicinal Ge (001) surfaces

机译:相邻Ge(001)表面的台阶结构

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摘要

The microscopic details of the step morphology of vicinal Ge(001 ) surfaces are analyzed on an atomic level using scanning tunnelling microscopy. Despite the strong correspondence to vicinal Si (001) surfaces, the step structure of the vicinal Ge(001) surface exhibits some significant differences. Rebonded, as well as nonbonded SB step edges, are observed and, related to the occurrence of both configurations, kinks with a minimum length of a0( ≈ 4 Å) do occur. Kinks in SB rebonded step edges can be regarded as independent excitations whereas for kinks in SB nonbonded step edges this is definitely not the case. Occasionally dimers are found at the SB steps, which are located just in between two dimer rows of the upper terrace. Finally, for the first time a ferromagnetic-like coupling between buckled dimers in the same row is observed close to step edges.
机译:使用扫描隧道显微镜在原子水平上分析邻近的Ge(001)表面台阶形态的微观细节。尽管与相邻的Si(001)表面具有很强的对应性,但相邻的Ge(001)表面的台阶结构仍显示出一些显着差异。观察到重新结合的和未结合的SB台阶边缘,并且与两种配置的发生有关,确实发生了最小长度为a0(≈4Å)的扭结。 SB重新结合的台阶边缘中的扭结可被视为独立激励,而对于SB非结合的台阶边缘中的扭结,绝对不是这种情况。有时在SB步骤处发现二聚体,它们位于上露台的两个二聚体行之间。最终,首次在台阶边缘附近观察到同一行中弯曲的二聚体之间的类铁磁耦合。

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